NEW PRINCIPLES OF HIGH-POWER SWITCHING WITH SEMICONDUCTOR-DEVICES

[1] BENZEL PM, 1983, REV SCI INSTRUM, V56, P1456

[2] BREWSTER IB, 1978, 13TH BUFF C, P252

[3] BRILEVSKY VI, 1984, ELEKTROTECHNIK, V3, P51

[4] Gorbatyuk A. V., 1982, Soviet Technical Physics Letters, V8, P298

[5] THEORY OF QUASI-DIODE OPERATION OF REVERSELY SWITCHED DINISTORS [J]. SOLID-STATE ELECTRONICS, 1988, 31 (10) : 1483 - 1491

[6] GREKHOV I, 1979, SOVIET TECH PHYS LET, V15, P395

[7] Grekhov I. V., 1983, Soviet Technical Physics Letters, V9, P188

[8] HIGH-POWER SUB-NANOSECOND SWITCH [J]. ELECTRONICS LETTERS, 1981, 17 (12) : 422 - 423

[9] GREKHOV IV, 1986, SEMICONDUCTOR PHYSIC

[10] GREKHOV IV, 1974, SOV PHYS SEMICOND+, V8, P672

[1] BENZEL PM, 1983, REV SCI INSTRUM, V56, P1456

[2] BREWSTER IB, 1978, 13TH BUFF C, P252

[3] BRILEVSKY VI, 1984, ELEKTROTECHNIK, V3, P51

[4] Gorbatyuk A. V., 1982, Soviet Technical Physics Letters, V8, P298

[5] THEORY OF QUASI-DIODE OPERATION OF REVERSELY SWITCHED DINISTORS [J]. SOLID-STATE ELECTRONICS, 1988, 31 (10) : 1483 - 1491

[6] GREKHOV I, 1979, SOVIET TECH PHYS LET, V15, P395

[7] Grekhov I. V., 1983, Soviet Technical Physics Letters, V9, P188

[8] HIGH-POWER SUB-NANOSECOND SWITCH [J]. ELECTRONICS LETTERS, 1981, 17 (12) : 422 - 423

[9] GREKHOV IV, 1986, SEMICONDUCTOR PHYSIC

[10] GREKHOV IV, 1974, SOV PHYS SEMICOND+, V8, P672