DESIGN OF LINEAR TUNABLE CMOS DIFFERENTIAL TRANSCONDUCTOR CELLS

被引：15

作者：

CZARNUL, Z

TAKAGI, S

机构：

[1] Department of Physical Electronics International Co-operation Center for Science and Technology, Tokyo Institute of Technology, Tokyo, 2-12-1 Ookayama, Meguro-ku

[2] Department of Physical Electronics International Co-operation Center for Science and Technology Tokyo Institute of Technology, Tokyo 152, 2-12-1 Ookayama, Meguro-ku

来源：

ELECTRONICS LETTERS | 1990年 / 26卷 / 21期

关键词：

Circuit theory; design; Mosfet-C Filters; Neural networks; Transconductors; Tuning;

D O I：

10.1049/el:19901158

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A general method for the construction of highly-linear CMOS differential transconductor cells (DTCs) is presented. Basic assumptions which allow several tunable CMOS transconductance cells to be formed are discussed. The method is based on the simplified square-law relationship of the MOSFET transistor. Extensive SPICE simulation results with MOSFET parameters as realistic as possible confirm the theory. © 1990, The Institution of Electrical Engineers. All rights reserved.

引用

页码：1809 / 1811

页数：3

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