INGAAS-GAAS-ALGAAS GAIN-GUIDED ARRAYS OPERATING IN THE IN-PHASE FUNDAMENTAL ARRAY MODE

被引：2

作者：

BEERNINK, KJ ^{[1
]}

ALWAN, JJ ^{[1
]}

COLEMAN, JJ ^{[1
]}

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 26期

关键词：

D O I：

10.1063/1.103780

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We compare the operation of single-stripe gain-guided InGaAs-GaAs-AlGaAs strained-layer quantum well heterostructure lasers emitting at wavelengths > 1.0-mu-m to five-element gain-guided arrays with 8-mu-m stripe width and center-to-center spacings S from 14 to 30-mu-m. Arrays with large interelement spacings exhibit a twin-lobed far-field pattern corresponding to the highest order supermode with 180-degrees phase shift between adjacent elements. Devices with smaller interelement spacing exhibit a single lobe in the far field suggestive of in-phase operation. Pulsed L-I characteristics show kink-free operation of arrays with S = 15-mu-m to 730 mW per uncoated facet at 1.8 A.

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收藏

页码：2764 / 2766

页数：3

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