MODEL DEPENDENCE OF THE CALCULATED LINE INTENSITY RATIOS FOR A HIGHLY IONIZED SILICON PLASMA

被引：10

作者：

STAVRAKAS, TA

LEE, RW

机构：

来源：

关键词：

D O I：

10.1088/0022-3700/15/12/017

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

引用

页码：1939 / 1948

页数：10

共 14 条

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[3]

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MEWE R, 1972, ASTRON ASTROPHYS, V20, P215

[7]

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SAMPSON D, 1980, COMMUNICATION

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[10]

SEATON MJ, 1962, P PHYS SOC, V79, P1106