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COMPUTER MODELING OF HIGH BARRIER SCHOTTKY DIODES APPLIED TO STUDY OF THE ACCURACY OF EXPERIMENTAL BARRIER DETERMINATION

被引：5
作者：
TOVE, PA
BOHLIN, K
NORDE, H
机构：
来源：
SURFACE SCIENCE | 1983年 / 132卷 / 1-3期
关键词：
D O I：
10.1016/0039-6028(83)90542-3
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
引用
收藏
页码：264 / 267
页数：4
相关论文
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[4]   A COMPARISON BETWEEN THE DIFFUSION-MODEL AND THE COMBINED DIFFUSION-THERMIONIC-EMISSION MODEL FOR MS-JUNCTIONS BY 2-CARRIER NUMERICAL COMPUTATIONS [J].
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PHYSICA SCRIPTA, 1981, 24 (02) :456-460
[5]   MODIFIED FORWARD IV PLOT FOR SCHOTTKY DIODES WITH HIGH SERIES RESISTANCE [J].
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JOURNAL OF APPLIED PHYSICS, 1979, 50 (07) :5052-5053
[6]  
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[7]  
SZE SM, 1981, PHYSICS SEMICONDUCTO, P293
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