SCATTERING OF THERMAL PHONONS BY LI-O DONORS IN SI

被引：7

作者：

FORTIER, D ^{[1
]}

DJERASSI, H ^{[1
]}

SUZUKI, K ^{[1
]}

ALBANY, HJ ^{[1
]}

机构：

[1] CEN SACLAY,SERV ELECTR PHYS,LAB PHYS MATERIAUX,91190 GIFSURYVETTE,FRANCE

来源：

PHYSICAL REVIEW B | 1974年 / 9卷 / 10期

关键词：

D O I：

10.1103/PhysRevB.9.4340

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：4340 / 4343

页数：4

共 15 条

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[2]

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[3] EVIDENCE FOR 870-GHZ PHONON EMISSION FROM SUPERCONDUCTING AL TUNNEL-DIODES THROUGH RESONANT SCATTERING BY OXYGEN IN SILICON [J].

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WELTE, M ;

EISENMENGER, W .

PHYSICAL REVIEW LETTERS, 1973, 31 (04) :215-216

[4] THERMAL PHONON SCATTERING IN LI-DOPED SI [J].

FORTIER, D ;

SUZUKI, K .

PHYSICAL REVIEW B, 1974, 9 (06) :2530-2538

[5]

FORTIER D, UNPUBLISHED

[6] AN OPTICAL STUDY OF LITHIUM AND LITHIUM-OXYGEN COMPLEXES AS DONOR IMPURITIES IN SILICON [J].

GILMER, TE ;

FRANKS, RK ;

BELL, RJ .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1965, 26 (08) :1195-&

[7]

HOLLAND MG, 1961, P INT C SEMICONDUCTO, P633

[8]

LAURENCE G, 1973, THESIS ORSAY

[9]

Seyfert P., 1970, Journal of Low Temperature Physics, V2, P555, DOI 10.1007/BF00628274

[10] LOW-TEMPERATURE THERMAL CONDUCTIVITY OF N-GE [J].

SUZUKI, K ;

MIKOSHIBA, N .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1971, 31 (01) :186-+

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