MAGNETIC-FIELD DEPENDENCE OF GATE VOLTAGE AND CURRENT IN A GAAS-HETEROSTRUCTURE IN THE QUANTUM HALL REGIME

被引：17

作者：

WEISS, D ^{[1
]}

MOSSER, V ^{[1
]}

GUDMUNDSSON, V ^{[1
]}

GERHARDTS, RR ^{[1
]}

VONKLITZING, K ^{[1
]}

机构：

[1] MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART 80,FED REP GER

来源：

SOLID STATE COMMUNICATIONS | 1987年 / 62卷 / 02期

关键词：

D O I：

10.1016/0038-1098(87)91118-5

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：89 / 91

页数：3

共 17 条

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[6] PATH-INTEGRAL APPROACH TO 2-DIMENSIONAL MAGNETO-CONDUCTIVITY PROBLEM .1. GENERAL FORMULATION OF APPROACH
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[7] STATISTICAL-MODEL FOR INHOMOGENEITIES IN A TWO-DIMENSIONAL ELECTRON-GAS IMPLYING A BACKGROUND DENSITY OF STATES BETWEEN LANDAU-LEVELS
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[8] GERHARDTS RR, 1976, SURF SCI, V58, P234
[9] SPECIFIC-HEAT OF TWO-DIMENSIONAL ELECTRONS IN GAAS-GAALAS MULTILAYERS
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[J]. PHYSICAL REVIEW LETTERS, 1985, 54 (16) : 1820 - 1823
[10] GUDMUNDSSON V, IN PRESS PHYS REV B

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