PHOTOELECTRON-SPECTROSCOPY STUDY OF AMORPHOUS GAAS AND GE

被引：18

作者：

SENEMAUD, C ^{[1
]}

BELIN, E ^{[1
]}

GHEORGHIU, A ^{[1
]}

THEYE, ML ^{[1
]}

机构：

[1] UNIV PARIS 06,OPTIQUE SOLIDES LAB,CNRS,UA 781,F-75230 PARIS 05,FRANCE

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1985年 / 77-8卷

关键词：

711 Electromagnetic Waves - 801 Chemistry;

D O I：

10.1016/0022-3093(85)90894-4

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

(Edited Abstract)

引用

页码：1289 / 1292

页数：4

共 13 条

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[4]

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LEY, L ;

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[6] THE ELECTRONIC-STRUCTURE OF DEFECTS IN AMORPHOUS GAAS [J].

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[7]

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[8]

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[9] DENSITIES OF VALENCE STATES OF AMORPHOUS AND CRYSTALLINE III-V AND II-VI SEMICONDUCTORS [J].

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PHYSICAL REVIEW B, 1974, 9 (06) :2627-2648

[10]

SHEVCHIK NJ, 1974, AIP C P, V20, P72

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