SITE-CONTROLLED GROWTH OF NANOWHISKERS

The metalogranic vapor-phase epitaxy (MOVPE) growth of site-controlled nanowhiskers having a single preferential growth direction is accomplished by using a SiO2 window mask. A small window size (200×200 nm in this experiment) is essential for growing a single whisker from a single Au- seed cluster formed inside each window of the mask. The presence of the SiO2 mask greatly influences the MOVPE growth process, especially the growth direction and resultant diameter of the whiskers. This influence may be due to surface migration of the source materials or source gas diffusion near the surface from the masked region to the window region. © 1995 American Institute of Physics.