HYDROGEN-IMPLANTED SILICON-NITRIDE

被引：24

作者：

STEIN, HJ

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1982年 / 129卷 / 08期

关键词：

D O I：

10.1149/1.2124294

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1786 / 1791

页数：6

共 26 条

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[10] HYDROGEN CONCENTRATION PROFILES AND CHEMICAL BONDING IN SILICON-NITRIDE [J].

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