RESIDUAL INFRARED-ABSORPTION IN AS-GROWN AND ANNEALED CRYSTALS OF TI-AL2O3

被引：78

作者：

AGGARWAL, RL

SANCHEZ, A

STUPPI, MM

FAHEY, RE

STRAUSS, AJ

RAPOPORT, WR

KHATTAK, CP

机构：

[1] GE,BINGHAMTON,NY 13902

[2] CRYSTAL SYST INC,RES & DEV,SALEM,MA 01970

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1988年 / 24卷 / 06期

关键词：

D O I：

10.1109/3.221

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1003 / 1008

页数：6

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