SCANNING TUNNELING MICROSCOPY ASSISTED OXIDE SURFACE ETCHING

被引：8

作者：

SAULYS, D ^{[1
]}

RUDD, G ^{[1
]}

GARFUNKEL, E ^{[1
]}

机构：

[1] RUTGERS STATE UNIV,SURFACE MODIFICAT LAB,PISCATAWAY,NJ 08855

来源：

JOURNAL OF APPLIED PHYSICS | 1991年 / 69卷 / 03期

关键词：

D O I：

10.1063/1.347216

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A scanning tunneling microscope (STM) is used to image the surface of and to etch defects on a quasi-two-dimensional conducting oxide, Na0.9Mo6O17. The surface defects (pits) are produced by briefly increasing the bias voltage or current between the tip and sample. The pits expand and change with time into either faceted or rounded shapes. These changes are strongly accentuated by the STM imaging process. We discuss explanations to account for the defect creation and STM-assisted surface etching processes.

引用

页码：1707 / 1711

页数：5

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