NATURE AND HABIT PLANES OF DEFECTS IN P+ ION-IMPLANTED SILICON

被引:17
作者
SESHAN, K
WASHBURN, J
机构
[1] LAWRENCE BERKELEY LAB,INORG MAT RES DIV,BERKELEY,CA
[2] UNIV CALIF,COLL ENGN,DEPT MAT SCI & ENGN,BERKELEY,CA
来源
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1974年 / 26卷 / 01期
关键词
D O I
10.1002/pssa.2210260136
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:345 / 352
页数:8
相关论文
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