HYDROSTATIC-PRESSURE EFFECT ON OXYGEN PRECIPITATES IN SILICON SINGLE-CRYSTAL

被引：1

作者：

MISIUK, A

ADAMCZEWSKA, J

BAKMISIUK, J

HARTWIG, J

MORAWSKI, A

WITCZAK, Z

机构：

[1] POLISH ACAD SCI,INST PHYS,PL-00901 WARSAW,POLAND

[2] UNIV JENA,DEPT PHYS,O-6900 JENA,GERMANY

[3] POLISH ACAD SCI,HIGH PRESSURE RES CTR,PL-00901 WARSAW,POLAND

来源：

ACTA PHYSICA POLONICA A | 1991年 / 80卷 / 03期

关键词：

D O I：

10.12693/APhysPolA.80.317

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The effect of hydrostatic pressure on some properties of Cz-Si with oxygen precipitates is investigated. The observed phenomena are discussed in terms of misfit between the precipitates and Si matrix.

引用

页码：317 / 320

页数：4

共 8 条

[1]

BAKMISIUK J, 1988, ACTA PHYS POL A, V73, P505

[2]

BAKMISIUK J, 1988, DEFECTS CRYSTALS, P359

[3] THE ROLE OF DIFFUSE-SCATTERING ON MICRODEFECTS IN THE PRECISE LATTICE-PARAMETER MEASUREMENT [J].

HOLY, V ;

HARTWIG, J .

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1988, 145 (02) :363-372

[4]

JUNG J, 1984, PHILOS MAG A, V50, P233, DOI 10.1080/01418618408244225

[5]

MISIUK A, 1987, 32 P IWK ILM 1987, V4, P85

[6]

MISIUK A, 1990, 35 P IWK ILM 1990, V4, P104

[7]

UMENO M, 1990, DEFECT CONTROL SEMIC, P273

[8]

WITCZAK Z, 1988, Patent No. 271717

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