GENERALIZED RECIPROCITY THEOREM FOR SEMICONDUCTOR-DEVICES

被引：35

作者：

MISIAKOS, K

LINDHOLM, FA

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 58卷 / 12期

关键词：

D O I：

10.1063/1.336226

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：4743 / 4744

页数：2

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[2] MATHEMATICAL PROOF OF THE VALIDITY OF RECIPROCITY IN ONE-DIMENSIONAL BIPOLAR-TRANSISTORS WITH ARBITRARY BASE PARAMETERS
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