CRITICAL-BEHAVIOR OF DISORDERED DEGENERATE SEMICONDUCTORS .1. MODELS, SYMMETRIES, AND FORMALISM

被引：197

作者：

FRADKIN, E ^{[1
]}

机构：

[1] UNIV CALIF SANTA BARBARA,INST THEORET PHYS,SANTA BARBARA,CA 93106

来源：

PHYSICAL REVIEW B | 1986年 / 33卷 / 05期

关键词：

D O I：

10.1103/PhysRevB.33.3257

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：3257 / 3262

页数：6

共 21 条

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