H IN TI THIN-FILMS

被引：5

作者：

KRIST, T ^{[1
]}

BRIERE, M ^{[1
]}

CSER, L ^{[1
]}

机构：

[1] HUNGARIAN ACAD SCI,H-1525 BUDAPEST 114,HUNGARY

来源：

THIN SOLID FILMS | 1993年 / 228卷 / 1-2期

关键词：

D O I：

10.1016/0040-6090(93)90583-B

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Ni-Ti single and multilayers were prepared in a triode sputtering machine. The thicknesses of the Ti layers were varied between 5 and 100 nm and the H-2 partial pressure between 5 x 10(-7) and 5 x 10(-5) mbar. The samples were characterized by various nuclear methods. It was found that for H-2 partial pressures below 5 x 10(-5) mbar the ratio of H:Ti atoms was 40 +/- 12 at.% for Ti thicknesses above 10 nm. For smaller thicknesses this ratio decreases to 20 at.%. H-2 partial pressures above 7 x 10(-4) mbar allow an H:Ti ratio of 1 to be reached for Ti layers thicker than 40 nm.

引用

页码：141 / 144

页数：4

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