ELECTRON AND HOLE MOBILITY IN TRIS(8-HYDROXYQUINALINOLATO-N1,O8) ALUMINUM

被引：389

作者：

KEPLER, RG ^{[1
]}

BEESON, PM ^{[1
]}

JACOBS, SJ ^{[1
]}

ANDERSON, RA ^{[1
]}

SINCLAIR, MB ^{[1
]}

VALENCIA, VS ^{[1
]}

CAHILL, PA ^{[1
]}

机构：

[1] SANDIA NATL LABS,ALBUQUERQUE,NM 87185

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 26期

关键词：

D O I：

10.1063/1.113806

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have measured the drift mobility of electrons and holes in thin, vapor-deposited films of tris(8-hydroxyquinolinolato-N1,O8) aluminum using a time of flight photoconductivity technique. The drift of mobility of both carriers is dispersive and strongly electric field and temperature dependent. At ambient temperature and an electric field of 4×105 V cm -1, the effective mobility of electrons and holes is 1.4×10-6 and 2×10-8 cm2 V -1 s-1, respectively, in a 400 nm thick sample.© 1995 American Institute of Physics.

引用

页码：3618 / 3620

页数：3

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