TIME-OF-FLIGHT ANALYSIS OF THE PLUME DYNAMICS OF LASER-ABLATED 6H-SILICON CARBIDE

被引:14
作者
CAPANO, MA
机构
[1] Wright Laboratories/Materials Directorate, Wright-Patterson AFB, Dayton
关键词
D O I
10.1063/1.359760
中图分类号
O59 [应用物理学];
学科分类号
摘要
The mass and velocity distributions of neutral species, ejected from a laser-ablated 6H-SiC target, are measured by time-of-flight mass spectroscopy. The laser-generated Flume is shown to consist of atomic silicon and carbon and small neutral clusters. Measured values of the mean kinetic energies of neutral Si and SiC2 species are 1.1 and 1.5 eV, respectively, when a 6H-SiC target is irradiated with 248 nm radiation at a power density of 1x10(8) W/cm(2). The kinetic energy distribution of Si+ ions is also measured for comparison with the neutral species, and shows a peak in the distribution at 38 eV. These data illustrate that an electronic, and not a thermal, mechanism for particle emission is active during the ablation of a 6H-SiC target. The relationship between the dynamics of the photoablation process and the properties of pulsed-laser-deposited films is also briefly discussed. (C) 1995 American Institute of Physics.
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页码:4790 / 4792
页数:3
相关论文
共 12 条
[1]   DEPOSITION OF SIC FILMS BY PULSED EXCIMER LASER ABLATION [J].
BALOOCH, M ;
TENCH, RJ ;
SIEKHAUS, WJ ;
ALLEN, MJ ;
CONNOR, AL ;
OLANDER, DR .
APPLIED PHYSICS LETTERS, 1990, 57 (15) :1540-1542
[2]   PULSED-LASER DEPOSITION OF SILICON-CARBIDE AT ROOM-TEMPERATURE [J].
CAPANO, MA ;
WALCK, SD ;
MURRAY, PT ;
DEMPSEY, D ;
GRANT, JT .
APPLIED PHYSICS LETTERS, 1994, 64 (25) :3413-3415
[3]   DEPOSITION AND CHARACTERIZATION OF SIC AND CORDIERITE THIN-FILMS GROWN BY PULSED LASER EVAPORATION [J].
CHEN, MY ;
MURRAY, PT .
JOURNAL OF MATERIALS SCIENCE, 1990, 25 (11) :4929-4932
[4]   GROWTH OF THIN-FILMS BY LASER-INDUCED EVAPORATION [J].
CHEUNG, JT ;
SANKUR, H .
CRC CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES, 1988, 15 (01) :63-109
[5]  
GEOHEGAN DB, 1994, PULSED LASER DEPOSIT, P117
[6]  
Kelly R., 1994, PULSED LASER DEPOSIT, V1st ed., P55
[7]  
MURRAY PT, 1991, MATER RES SOC S P, V210, P234
[8]   LASER-INDUCED SPUTTERING OF ZNO, TIO2, CDSE AND GAP NEAR THRESHOLD LASER FLUENCE [J].
NAKAYAMA, T .
SURFACE SCIENCE, 1983, 133 (01) :101-113
[9]   PULSED-LASER DEPOSITION OF SIC FILMS ON FUSED-SILICA AND SAPPHIRE SUBSTRATES [J].
RIMAI, L ;
AGER, R ;
HANGAS, J ;
LOGOTHETIS, EM ;
ABUAGEEL, N ;
ASLAM, M .
JOURNAL OF APPLIED PHYSICS, 1993, 73 (12) :8242-8249
[10]   PREPARATION OF ORIENTED SILICON-CARBIDE FILMS BY LASER ABLATION OF CERAMIC SILICON-CARBIDE TARGETS [J].
RIMAI, L ;
AGER, R ;
LOGOTHETIS, EM ;
WEBER, WH ;
HANGAS, J .
APPLIED PHYSICS LETTERS, 1991, 59 (18) :2266-2268