TRANSIENT HIGH-LEVEL MAJORITY AND MINORITY-CARRIER PHOTOCURRENTS IN P-TYPE SILICON SCHOTTKY-BARRIER DIODES .1. COMPARISON WITH ANALYTIC THEORY

被引：2

作者：

NORDE, H ^{[1
]}

SEIBT, W ^{[1
]}

JANNEY, R ^{[1
]}

机构：

[1] UNIV UPPSALA,SCH ENGN,DEPT ELECTR,S-75121 UPPSALA,SWEDEN

来源：

SOLID-STATE ELECTRONICS | 1976年 / 19卷 / 07期

关键词：

D O I：

10.1016/0038-1101(76)90065-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：653 / 655

页数：3

共 13 条

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