INVESTIGATION OF VACUUM DEPOSITION OF BI2TE3 - BASED THERMOELECTRIC-MATERIALS

被引：22

作者：

BORKOWSKI, K ^{[1
]}

PRZYLUSKI, J ^{[1
]}

机构：

[1] WARSAW UNIV TECHNOL,INST INORGAN TECHNOL,PL-00664 WARSAW,POLAND

来源：

关键词：

D O I：

10.1016/0025-5408(87)90056-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：381 / 387

页数：7

共 10 条

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[3] HUIJER PW, 1963, PHILLIPS TECHN REV, V24, P144
[4] Maissell L., 1970, HDB THIN FILM TECHNO
[5] Mills K.C., 1974, THERMODYNAMIC DATA I
[6] STABILITIES OF THE GASEOUS MOLECULES, BISE, BITE, AND SBTE
PORTER, RF
SPENCER, CW
[J]. JOURNAL OF CHEMICAL PHYSICS, 1960, 32 (03) : 943 - 944
[7] MOLECULES IN EQUILIBRIUM VAPORIZATION OF ANTIMONY SULFIDE AND SELENIDE
SULLIVAN, CL
PRUSACZY.JE
CARLSON, KD
[J]. JOURNAL OF CHEMICAL PHYSICS, 1970, 53 (03) : 1289 - &
[8] 1982, P INT C THERMOELECTR
[9] 1984, P INT C THERMOELECTR
[10] 1980, P INT C THERMOELECTR