BREAKDOWN CHARACTERISTICS OF GERMANIUM BONDED DIODE AND ITS MICROWAVE OSCILLATION

被引：1

作者：

DAIKOKU, K

MIZUSHIMA, Y

机构：

来源：

关键词：

D O I：

10.1143/JJAP.6.416

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：416 / +

页数：1

共 4 条

[1]

GIBSON AF, PROGRESS SEMICONDUCT, V4, P83

KITA, S .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1966, 54 (12) :1992-&

[3] ZENER BREAKDOWN IN ALLOYED GERMANIUM P+-N JUNCTIONS [J].

TOKUYAMA, T .

[4] HIGH ELECTRIC FIELD EFFECTS IN GERMANIUM PARA-NORAMAL JUNCTION [J].

YAMAGUCHI, J ;

HAMAKAWA, Y .