COMPARISON OF THE ORIENTATION EFFECT OF SIO2-ENCAPSULATEED AND SI3N4-ENCAPSULATED GAAS-MESFETS

被引：20

作者：

OHNISHI, T

ONODERA, T

YOKOYAMA, N

NISHI, H

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1985年 / 6卷 / 04期

关键词：

D O I：

10.1109/EDL.1985.26086

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：172 / 174

页数：3

共 12 条

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[7] CHARACTERIZATION OF WSIX/GAAS SCHOTTKY CONTACTS [J].

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[8]

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[10] GAAS LSI-DIRECTED MESFETS WITH SELF-ALIGNED IMPLANTATION FOR N+-LAYER TECHNOLOGY (SAINT) [J].

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