TEMPERATURE-DEPENDENCE OF ACCEPTOR-HOLE RECOMBINATION IN GERMANIUM

被引：8

作者：

DARKEN, LS ^{[1
]}

JELLISON, GE ^{[1
]}

机构：

[1] OAK RIDGE NATL LAB,DIV SOLID STATE,OAK RIDGE,TN 37831

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 14期

关键词：

D O I：

10.1063/1.102281

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1424 / 1426

页数：3

共 11 条

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[4]

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[9] DEEP LEVELS IN WIDE BAND-GAP III-V-SEMICONDUCTORS [J].

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[10] ACCURATE DETERMINATION OF THE FREE CARRIER CAPTURE KINETICS OF DEEP TRAPS BY SPACE-CHARGE METHODS [J].

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