X-RAY PHOTOELECTRON-SPECTROSCOPY STUDY OF GAAS (001) AND INP (001) CLEANING PROCEDURES PRIOR TO MOLECULAR-BEAM EPITAXY

被引:33
作者
CONTOUR, JP
MASSIES, J
SALETES, A
机构
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1985年 / 24卷 / 07期
关键词
D O I
10.1143/JJAP.24.L563
中图分类号
O59 [应用物理学];
学科分类号
摘要
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页码:L563 / L565
页数:3
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