X-RAY-DIFFRACTION IMAGING OF MAN-MADE AND NATURAL DIAMOND

被引:12
作者
BLACK, DR [1 ]
BURDETTE, HE [1 ]
机构
[1] GE CO,SUPERABRAS,WORTHINGTON,OH 43085
关键词
D O I
10.1016/0925-9635(93)90041-Y
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Natural diamond crystals, intended for use as substrates for chemical vapor deposition growth of homoepitaxial diamond films and man-made diamond crystals have been studied by X-ray diffraction imaging (topography) using the National Institute of Standards and Technology materials science X-ray beam line at the National Synchrotron Light Source. An examination of type Ia, type IIa and type IIb natural crystals has shown that, in general, type Ia material is less strained with a better-defined microstructure and with less variation among samples. The type II samples show a large degree of variation in residual strain and a disrupted microstructure resulting from a large number of crystalline imperfections. The high temperature, high pressure process for growth of man-made diamond yields crystals that are almost always superior to commercially available natural material.
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页码:121 / 125
页数:5
相关论文
共 11 条
[1]   DIAMOND PROPERTIES AS A FUNCTION OF ISOTOPIC COMPOSITION [J].
BANHOLZER, WF ;
ANTHONY, TR .
THIN SOLID FILMS, 1992, 212 (1-2) :1-10
[2]   ISOTOPE DEPENDENCE OF THE LATTICE-CONSTANT OF DIAMOND [J].
HOLLOWAY, H ;
HASS, KC ;
TAMOR, MA ;
ANTHONY, TR ;
BANHOLZER, WF .
PHYSICAL REVIEW B, 1991, 44 (13) :7123-7126
[3]   STACKING-FAULT CONTRAST IN X-RAY-DIFFRACTION - A HIGH-RESOLUTION EXPERIMENTAL-STUDY [J].
JIANG, SS ;
LANG, AR .
PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES, 1983, 388 (1795) :249-&
[4]   CAUSES OF BIREFRINGENCE IN DIAMOND [J].
LANG, AR .
NATURE, 1967, 213 (5073) :248-&
[5]  
LANG AR, 1979, PROPERTIES DIAMOND, P434
[6]   NBS MATERIALS SCIENCE BEAMLINES AT NSLS [J].
SPAL, R ;
DOBBYN, RC ;
BURDETTE, HE ;
LONG, GG ;
BOETTINGER, WJ ;
KURIYAMA, M .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1984, 222 (1-2) :189-192
[7]   GROWTH OF LARGE, HIGH-QUALITY DIAMOND CRYSTALS AT GENERAL-ELECTRIC [J].
STRONG, HM ;
WENTORF, RH .
AMERICAN JOURNAL OF PHYSICS, 1991, 59 (11) :1005-1008
[8]  
TAKAGI M, 1964, P ROY SOC LOND A MAT, V279, P490
[9]  
WARD RCC, 1983, IND DIAMOND REV, V43, P137
[10]   SOME STUDIES OF DIAMOND GROWTH RATES [J].
WENTORF, RH .
JOURNAL OF PHYSICAL CHEMISTRY, 1971, 75 (12) :1833-&