NEW MECHANISM OF HOT-CARRIER GENERATION IN VERY SHORT-CHANNEL MOSFETS

被引：29

作者：

CHILDS, PA

LEUNG, CCC

机构：

[1] School of Electronic and Electrical Engineering, University of Birmingham, Birmingham

来源：

ELECTRONICS LETTERS | 1995年 / 31卷 / 02期

关键词：

MOSFETS; HOT CARRIERS;

D O I：

10.1049/el:19950091

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Results are presented which suggest that as device dimensions are scaled down, hot carrier reliability problems may re-emerge despite reductions in supply voltage. This conclusion is drawn from theoretical results which show an increasingly important role played by electron-electron interactions as device dimensions are reduced.

引用

页码：139 / 141

页数：3

共 5 条

[1]

CHEUNG JE, 1990, IEEE T, V37, P1651

[2] SPATIALLY TRANSIENT HOT-ELECTRON DISTRIBUTIONS IN SILICON DETERMINED FROM THE CHAMBERS PATH-INTEGRAL SOLUTION OF THE BOLTZMANN TRANSPORT-EQUATION [J].