Strain compensation in ternary Si1-x-yGexBy films

被引：19

作者：

Tillack, B

Zaumseil, P

Morgenstern, G

Kruger, D

Dietrich, B

Ritter, G

机构：

[1] Institute for Semiconductor Physics, D-15204 Frankfurt (Oder)

来源：

JOURNAL OF CRYSTAL GROWTH | 1995年 / 157卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(95)00405-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Strain compensation in ternary Si1-x-yGexBy films deposited by RTCVD with x = 0.2 and y less than or equal to 0.2 was demonstrated. The strain estimated by double crystal X-ray diffraction decreases with increasing boron content due to the decrease of lattice constant by incorporation of boron. The boron concentration estimated for the strain compensation effect obtained and the density of holes calculated from Raman measurements are smaller than the total amount of incorporated boron. That indicates that only a part of the total boron content is substitutional boron.

引用

收藏

页码：181 / 184

页数：4

相关论文

共 13 条

[1] EFFECT OF FREE CARRIERS ON ZONE-CENTER VIBRATIONAL MODES IN HEAVILY DOPED P-TYPE SI .2. OPTICAL MODES [J].

CERDEIRA, F ;

FJELDLY, TA ;

CARDONA, M .

PHYSICAL REVIEW B, 1973, 8 (10) :4734-4745

[2] LATTICE DISTORTION IN A STRAIN-COMPENSATED SI1-X-YGEXCY LAYER ON SILICON [J].

DIETRICH, B ;

OSTEN, HJ ;

RUCKER, H ;

METHFESSEL, M ;

ZAUMSEIL, P .

PHYSICAL REVIEW B, 1994, 49 (24) :17185-17190

[3] GROWTH AND STRAIN COMPENSATION EFFECTS IN THE TERNARY SI1-X-YGEXCY ALLOY SYSTEM [J].

EBERL, K ;

IYER, SS ;

ZOLLNER, S ;

TSANG, JC ;

LEGOUES, FK .

APPLIED PHYSICS LETTERS, 1992, 60 (24) :3033-3035

[4]

FURUKAWA S, 1989, Patent No. 4885614

[5] DETERMINATION OF THE LATTICE CONTRACTION OF BORON-DOPED SILICON [J].

HOLLOWAY, H ;

MCCARTHY, SL .

JOURNAL OF APPLIED PHYSICS, 1993, 73 (01) :103-111

[6] STRAIN COMPENSATION BY GE IN B-DOPED SILICON EPITAXIAL-FILMS [J].

MASZARA, WP ;

THOMPSON, T .

JOURNAL OF APPLIED PHYSICS, 1992, 72 (09) :4477-4479

[7] GROWTH OF AN INVERSE TETRAGONAL DISTORTED SIGE LAYER ON SI(001) BY ADDING SMALL AMOUNTS OF CARBON [J].

OSTEN, HJ ;

BUGIEL, E ;

ZAUMSEIL, P .

APPLIED PHYSICS LETTERS, 1994, 64 (25) :3440-3442

[8] MODULATION DOPING IN GEXSI1-X/SI STRAINED LAYER HETEROSTRUCTURES [J].

PEOPLE, R ;

BEAN, JC ;

LANG, DV ;

SERGENT, AM ;

STORMER, HL ;

WECHT, KW ;

LYNCH, RT ;

BALDWIN, K .

APPLIED PHYSICS LETTERS, 1984, 45 (11) :1231-1233

[9] SI1-X-YGEXCY GROWTH AND PROPERTIES OF THE TERNARY-SYSTEM [J].

POWELL, AR ;

EBERL, K ;

EK, BA ;

IYER, SS .

JOURNAL OF CRYSTAL GROWTH, 1993, 127 (1-4) :425-429

[10] GROWTH, ELECTRICAL-PROPERTIES AND RECIPROCAL LATTICE MAPPING CHARACTERIZATION OF HEAVILY B-DOPED, HIGHLY STRAINED SILICON-MOLECULAR BEAM EPITAXIAL STRUCTURES [J].

SARDELA, MR ;

RADAMSON, HH ;

EKBERG, JO ;

SUNDGREN, JE ;

HANSSON, GV .

JOURNAL OF CRYSTAL GROWTH, 1994, 143 (3-4) :184-193