CURRENTS THROUGH THIN FILMS OF ALUMINUM NITRIDE

[1] FLUGGE S, 1956, HANDBUCH PHYSIK ED, V17, P155

[2] FRANZ W, 1956, HDB PHYSIK, V17, P155

[3] KEFFER F, 1957, J CHEM PHYS, V7, P675

[4] LEWICKI G, THESIS

[5] LEWICKI GW, 1966, PHYS REV LETT, V16, P21

[6] THE FORMATION OF METAL OXIDE FILMS USING GASEOUS AND SOLID ELECTROLYTES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (12) : 1240 - 1245

[7] ENERGY GAPS OF III-V AND (RARE EARTH)-V SEMICONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (10) : 2999 - &

[8] EFFECT OF NONPARABOLIC ENERGY BANDS ON TUNNELING THROUGH THIN INSULATING FILMS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1966, 27 (10) : 1599 - &

[1] FLUGGE S, 1956, HANDBUCH PHYSIK ED, V17, P155

[2] FRANZ W, 1956, HDB PHYSIK, V17, P155

[3] KEFFER F, 1957, J CHEM PHYS, V7, P675

[4] LEWICKI G, THESIS

[5] LEWICKI GW, 1966, PHYS REV LETT, V16, P21

[6] THE FORMATION OF METAL OXIDE FILMS USING GASEOUS AND SOLID ELECTROLYTES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (12) : 1240 - 1245

[7] ENERGY GAPS OF III-V AND (RARE EARTH)-V SEMICONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (10) : 2999 - &

[8] EFFECT OF NONPARABOLIC ENERGY BANDS ON TUNNELING THROUGH THIN INSULATING FILMS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1966, 27 (10) : 1599 - &