SURFACE OXIDATION AND ANOMALOUS ELECTRICAL BEHAVIOR OF CADMIUM MERCURY TELLURIDE

被引:24
作者
MULLIN, JB
ROYLE, A
机构
关键词
D O I
10.1088/0022-3727/17/4/002
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:L69 / L72
页数:4
相关论文
共 13 条
[1]  
ANTCLIFFE GA, 1971, J PHYS CHEM SOLID S1, V32, P499
[2]  
ARAPOV YG, 1979, SOV PHYS SEMICOND+, V13, P1126
[3]  
BEZINGER AB, 1982, NANCHON T GIREDMET B, V5, P101
[4]  
BOVINA LA, 1975, SOV PHYS SEMICOND+, V9, P1362
[5]   ELECTRICAL-PROPERTIES OF NARROW GAP LOW CARRIER CONCENTRATION P-HG1-XCDXTE [J].
CAPORALETTI, O ;
MICKLETHWAITE, WFH .
PHYSICS LETTERS A, 1982, 89 (03) :151-153
[6]  
ELIZAROV AI, 1983, SOV PHYS SEMICOND+, V17, P284
[7]   ELECTRICAL TRANSPORT PROPERTIES OF SEMICONDUCTING CDXHG1-XTE ALLOYS [J].
ELLIOTT, CT ;
SPAIN, IL .
SOLID STATE COMMUNICATIONS, 1970, 8 (24) :2063-&
[8]  
MULLIN JB, 1978, S CHARACTERISATION A
[9]  
NARITA S, 1977, IL NUOVO CIMENTO B, V39, P834
[10]   THEORY OF AN EXPERIMENT FOR MEASURING THE MOBILITY AND DENSITY OF CARRIERS IN THE SPACE-CHARGE REGION OF A SEMICONDUCTOR SURFACE [J].
PETRITZ, RL .
PHYSICAL REVIEW, 1958, 110 (06) :1254-1262