EFFECT OF ANODE BIAS ON THE INDEX OF REFRACTION OF AL2O3 THIN-FILMS DEPOSITED BY DC S-GUN MAGNETRON REACTIVE SPUTTERING

被引:12
作者
CLARKE, PJ
机构
[1] Sputtered Films Inc., Santa Barbara, CA 93103, United States
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1994年 / 12卷 / 02期
关键词
Direct current - Hysteresis curve - Index of refraction - Linear portions - Magnetron reactive sputtering - Magnetron sputtering systems - Reactive deposition - Sputter cathode;
D O I
10.1116/1.578840
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Using direct-current anode bias in an S-Gun magnetron sputtering system during the reactive deposition of Al2O3 increases the index of refraction from 1.52 to 1.70. This effect takes place at less than 75% of the 02 flow rate necessary to convert the sputter cathode from the metal mode to the oxide mode. A second effect of sputtering in the linear portion before the ''knee'' of the voltage versus 02 flow rate curve (hysteresis curve) is a stable and noise-free deposition.
引用
收藏
页码:594 / 597
页数:4
相关论文
共 5 条
[1]   REACTIVE DEPOSITION OF LOW-LOSS AL2O3 OPTICAL-WAVEGUIDES BY MODIFIED DC PLANAR MAGNETRON SPUTTERING [J].
ESTE, G ;
WESTWOOD, WD .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (03) :1238-1247
[2]  
KADLEC S, 1989, VACUUM, V41, P487
[3]   DISCHARGE CHARACTERISTICS FOR MAGNETRON SPUTTERING OF AL IN AR AND AR-O-2 MIXTURES [J].
MANIV, S ;
WESTWOOD, WD .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (03) :743-751
[4]  
SCHILLER S, 1979, UNPUB P INT C ION PL, P211
[5]  
THEUERER HC, 1965, T METALL SOC AIME, V233, P588