REDUCTION OF PROPAGATION LOSS IN SILICA-ON-SILICON CHANNEL WAVE-GUIDES FORMED BY ELECTRON-BEAM IRRADIATION

被引：7

作者：

SYMS, RRA ^{[1
]}

TATE, TJ ^{[1
]}

GRANT, MF ^{[1
]}

机构：

[1] BNR EUROPE LTD,HARLOW CM17 9NA,ESSEX,ENGLAND

来源：

ELECTRONICS LETTERS | 1994年 / 30卷 / 18期

关键词：

OPTICAL WAVE-GUIDES; SILICON DIOXIDE; ELECTRON BEAM EFFECTS;

D O I：

10.1049/el:19941021

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Low loss is demonstrated at infrared wavelengths in channel guides formed by electron beam irradiation of SiO2 layers on Si substrates. By comparing materials from different PECVD processes, it is shown that substrate losses may largely be eliminated by using a suitable SiO2 thickness, and that extrinsic absorption caused by hydrogen contamination may be reduced by annealing before irradiation. The effectiveness of annealing depends strongly on the original material composition.

引用

页码：1480 / 1481

页数：2