256KB FERROELECTRIC NONVOLATILE MEMORY TECHNOLOGY FOR 1T/1C CELL WITH 100NS READ/WRITE TIME AT 3V

被引：26

作者：

SUMI, T

MORIWAKI, N

NAKANE, G

NAKAKUMA, T

JUDAI, Y

UEMOTO, Y

NAGANO, Y

HAYASHI, S

AZUMA, M

OTSUKI, T

KANO, G

CUCHIARO, JD

SCOTT, MC

MCMILLAN, LD

DEARAUJO, CAP

机构：

[1] SYMETRIX CORP,COLORADO SPRINGS,CO

[2] UNIV COLORADO,COLORADO SPRINGS,CO 80907

来源：

INTEGRATED FERROELECTRICS | 1995年 / 6卷 / 1-4期

关键词：

D O I：

10.1080/10584589508019349

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 3V 100ns read/write 256kb ferroelectric nonvolatile memory (FeRAM) is achieved with 1T/1C cells, novel reference cell circuits and cell plate circuits. The FeRAM is fabricated in 1.2um CMOS process with single Aluminum interconnection and Bi based layered perovskite ferroelectric material ''Y-1'' and has no fatigue even after 10(12) destructive read and re-write stress cycles.

引用

页码：1 / 13

页数：13