LASING CHARACTERISTICS UNDER HIGH-TEMPERATURE OPERATION OF 1.55-MU-M STRAINED INGAASP/INGAALAS MQW LASER WITH INALAS ELECTRON STOPPER LAYER

被引：13

作者：

MURAI, H

MATSUI, Y

OGAWA, Y

KUNII, T

机构：

[1] Semiconductor Technology Laboratory, OKI Electric Industry Company Limited, Hachioji, Tokyo 193

来源：

ELECTRONICS LETTERS | 1995年 / 31卷 / 24期

关键词：

SEMICONDUCTOR JUNCTION LASERS; OPTICAL COMMUNICATION;

D O I：

10.1049/el:19951458

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors have developed a 1.55 mu m strained InGaAsP/ InGaAlAs MQW laser with an InAlAs electron stopper layer. The device showed low threshold current and high maximum temperature. Superior lasing characteristics have been demonstrated through comparison with conventional strained MQW lasers.

引用

页码：2105 / 2107

页数：3

共 4 条

[1] ADVANCED 1.55-MU-M QUANTUM-WELL GAINALAS LASER-DIODES WITH ENHANCED PERFORMANCE
BORCHERT, B
GESSNER, R
STEGMULLER, B
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1994, 33 (02): : 1034 - 1039
[2] Kasukawa A., 1994, CLEO '94. Summaries of Papers Presented at the Conference on Lasers and Electro-Optics. Vol.8. 1994 Technical Digest Series. Conference Edition (Cat. No.94CH3463-7), P257
[3] NOVEL DESIGN OF ALGAINAS-INP LASERS OPERATING AT 1.3-MU-M
KAZARINOV, RF
BELENKY, GL
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1995, 31 (03) : 423 - 426
[4] ZAH CE, 1995, SEVENTH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS, P14, DOI 10.1109/ICIPRM.1995.522064

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