A LOW-POWER 46 NS 256 KBIT CMOS STATIC RAM WITH DYNAMIC DOUBLE WORD LINE

被引：19

作者：

SAKURAI, T ^{[1
]}

MATSUNAGA, J ^{[1
]}

ISOBE, M ^{[1
]}

OHTANI, T ^{[1
]}

SAWADA, K ^{[1
]}

AONO, A ^{[1
]}

NOZAWA, H ^{[1
]}

IIZUKA, T ^{[1
]}

KOHYAMA, S ^{[1
]}

机构：

[1] TOSHIBA MICROCOMP ENGN CORP,KAWASAKI 210,JAPAN

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1984年 / 19卷 / 05期

关键词：

D O I：

10.1109/JSSC.1984.1052192

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：578 / 585

页数：8

共 14 条

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[7]

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OCHII K, 1982, FEB ISSCC, P260

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