POLARIZATION SELF-MODULATION AT MULTIGIGAHERTZ FREQUENCIES IN AN EXTERNAL-CAVITY SEMICONDUCTOR-LASER

被引：26

作者：

LOH, WH

SCHREMER, AT

TANG, CL

机构：

[1] School of Electrical Engineering, Cornell University, Ithaca

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1990年 / 2卷 / 07期

关键词：

D O I：

10.1109/68.56628

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Polarization self-modulation at frequencies far above the relaxation oscillation frequency has been achieved in an externalcavity hybrid ring semiconductor laser without the need for any highspeed electronics. This demonstrates that polarization modulation may be a viable alternative for generating controlled signals at extremely high frequencies (≈100 GHz) for use as microwave and millimeter wave optical carriers. © 1990 IEEE

引用

页码：467 / 469

页数：3

共 6 条

[1] EFFICIENT NARROW-BAND DIRECT MODULATION OF SEMICONDUCTOR INJECTION-LASERS AT MILLIMETER WAVE FREQUENCIES OF 100 GHZ AND BEYOND [J].

LAU, KY .

APPLIED PHYSICS LETTERS, 1988, 52 (26) :2214-2216

[2]

LOH WH, 1990, APPL PHYS LETT, V56, P26

[3] DOUBLE-HETEROSTRUCTURE GAAS-AL-XGA-1-XAS [110] P-N-JUNCTION-DIODE MODULATOR [J].

MCKENNA, J ;

REINHART, FK .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (05) :2069-2078

[4] ELECTRO-OPTIC FREQUENCY-MODULATED AND POLARIZATION-MODULATED INJECTION-LASER [J].

REINHART, FK ;

LOGAN, RA .

APPLIED PHYSICS LETTERS, 1980, 36 (12) :954-957

[5] 108-GHZ PASSIVE-MODE LOCKING OF A MULTIPLE QUANTUM WELL SEMICONDUCTOR-LASER WITH AN INTRACAVITY ABSORBER [J].

SANDERS, S ;

ENG, L ;

PASLASKI, J ;

YARIV, A .

APPLIED PHYSICS LETTERS, 1990, 56 (04) :310-311

[6] GENERATION OF BANDWIDTH-LIMITED 2 PS PULSES WITH 100 GHZ REPETITION RATE FROM MULTISEGMENTED INJECTION-LASER [J].

VASILEV, PP ;

SERGEEV, AB .

ELECTRONICS LETTERS, 1989, 25 (16) :1049-1050

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