A SELF-CONSISTENT PSEUDO-2-DIMENSIONAL MODEL FOR HOT-ELECTRON CURRENT IN MOSTS

被引：6

作者：

TANAKA, S

SAITO, S

ATSUMI, S

YOSHIKAWA, K

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1986年 / 33卷 / 06期

关键词：

D O I：

10.1109/T-ED.1986.22563

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：743 / 753

页数：11

共 16 条

[1] ONE-DIMENSIONAL THEORY ON EFFECTS OF DIFFUSION CURRENT AND CARRIER VELOCITY SATURATION ON E-TYPE IGFET CURRENT-VOLTAGE CHARACTERISTICS [J].

DANG, LM .

SOLID-STATE ELECTRONICS, 1977, 20 (09) :781-788

[2] SIMPLE 2-DIMENSIONAL MODEL FOR IGFET OPERATION IN SATURATION REGION [J].

ELMANSY, YA ;

BOOTHROYD, AR .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (03) :254-262

[3] DOPANT DIFFUSION IN SILICON .3. ACCEPTORS [J].

GHOSHTAG.RN .

PHYSICAL REVIEW B-SOLID STATE, 1971, 3 (08) :2507-&

[4]

GIBBONS JF, 1975, PROJECTED RANGE STAT

[5] PAPERS ON CARRIER DRIFT VELOCITIES IN SILICON AT HIGH ELECTRIC FIELD STRENGTHS [J].

GIBBSON, JF .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (01) :37-&

[6]

HARA H, 1971, T I ELECTRON COMMU C, V54, P594

[7] 1 MU-M MOSFET VLSI TECHNOLOGY .4. HOT-ELECTRON DESIGN CONSTRAINTS [J].

NING, TH ;

COOK, PW ;

DENNARD, RH ;

OSBURN, CM ;

SCHUSTER, SE ;

YU, HN .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1979, 14 (02) :268-275

[8] ENERGY-CONSERVATION CONSIDERATIONS IN CHARACTERIZATION OF IMPACT IONIZATION IN SEMICONDUCTORS [J].

OKUTO, Y ;

CROWELL, CR .

PHYSICAL REVIEW B, 1972, 6 (08) :3076-&

[9] IONIZATION COEFFICIENTS IN SEMICONDUCTORS - NONLOCALIZED PROPERTY [J].

OKUTO, Y ;

CROWELL, CR .

PHYSICAL REVIEW B, 1974, 10 (10) :4284-4296

[10] MOBILITY OF HOLES AND ELECTRONS IN HIGH ELECTRIC FIELDS [J].

RYDER, EJ .

PHYSICAL REVIEW, 1953, 90 (05) :766-769

← 1 2 →