ACCELERATION OF ASSISTED HOLE TUNNELLING DUE TO BAND-MIXING EFFECTS IN SEMICONDUCTOR HETEROSTRUCTURES

被引：26

作者：

FERREIRA, R ^{[1
]}

BASTARD, G ^{[1
]}

机构：

[1] ECOLE NORM SUPER, DEPT PHYS, 24 RUE LHOMOND, F-75231 PARIS 05, FRANCE

来源：

EUROPHYSICS LETTERS | 1989年 / 10卷 / 03期

关键词：

D O I：

10.1209/0295-5075/10/3/016

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：279 / 284

页数：6

共 18 条

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[10]

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