TEMPERATURE-DEPENDENCE OF BAND-GAP IN SEMICONDUCTORS

被引：27

作者：

BAUMANN, K ^{[1
]}

机构：

[1] UNIV GRAZ,INST THEORET PHYS,GRAZ,AUSTRIA

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1974年 / 63卷 / 01期

关键词：

D O I：

10.1002/pssb.2220630162

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：K71 / K74

页数：4

共 13 条

[1]

BROOKS H, UNPUBLISHED

[2] TEMPERATURE DEPENDENCE OF THE ENERGY GAP IN SEMICONDUCTORS [J].

FAN, HY .

PHYSICAL REVIEW, 1951, 82 (06) :900-905

[3] UNSUCCESSFUL BROOKS-YU TYPE CALCULATION OF HGTE BANDGAP TEMPERATURE DEPENDENCE [J].

GUENZER, CS ;

BIENENSTOCK, A .

PHYSICS LETTERS A, 1971, A 34 (03) :172-+

[4] DEBYE-WALLER FACTORS AND PBTE BAND-GAP TEMPERATURE DEPENDENCE [J].

KEFFER, C ;

HAYES, TM ;

BIENENSTOCK, A .

PHYSICAL REVIEW B-SOLID STATE, 1970, 2 (06) :1966-+

[5] LOW-FIELD MOBILITY AND GALVANOMAGNETIC PROPERTIES OF HOLES IN GERMANIUM WITH PHONON SCATTERING [J].

LAWAETZ, P .

PHYSICAL REVIEW, 1968, 174 (03) :867-&

[6]

Long D., 1968, Energy Bands in Semiconductors

[7]

PIKUS GE, 1959, SOV PHYS-SOLID STATE, V1, P1502

[8] OPTICAL ABSORPTION OF GALLIUM ARSENIDE BETWEEN 0.6 AND 2.75 EV [J].

STURGE, MD .

PHYSICAL REVIEW, 1962, 127 (03) :768-+

[9] ABSORPTION SPECTRUM OF GALLIUM PHOSPHIDE BETWEEN 2 AND 2 EV [J].

SUBASHIE.VK ;

CHALIKYA.GA .

PHYSICA STATUS SOLIDI, 1966, 13 (02) :K91-&

[10] CALCULATION OF TEMPERATURE DEPENDENCE OF ENERGY GAPS IN PBTE AND SNTE [J].

TSANG, YW ;

COHEN, ML .

PHYSICAL REVIEW B, 1971, 3 (04) :1254-&

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