ON THE CLOSE COMPENSATION MECHANISM IN CDTE(LI, CL) CRYSTALS

被引：11

作者：

AGRINSKAYA, NV

MATVEEV, OA

机构：

来源：

关键词：

D O I：

10.1016/0168-9002(89)91368-5

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：263 / 264

页数：2

共 10 条

[1]

Agrinskaya N.V., 1983, FIZ TEKH POLUPROV, V17, P394

[2]

AGRINSKAYA NV, 1985, FIZ TEKH POLUPROV, V19, P320

[3]

ARKADEVA EN, 1976, FIZ TEKH POLUPROV, P2153

[4] ELECTRIC PROPERTIES OF SEMI-INSULATING CRYSTALS CDTE=C1 [J].

ARKADYEVA, EN ;

MATVEEV, OA .

REVUE DE PHYSIQUE APPLIQUEE, 1977, 12 (02) :239-240

[5] COMPLEX BEHAVIOR OF AG IN CDTE [J].

CHAMONAL, JP ;

MOLVA, E ;

PAUTRAT, JL ;

REVOIL, L .

[6]

CROWDER BL, 1966, PHYS REV, V150

[7]

MANDEL C, 1964, PHYS REV A, V134

[8]

MARFAING Y, 1981, PROGR CRYST GROWTH C, V4

[9]

NEWMARK GF, 1982, J CRYST GROWTH, V59

POROWSKI, S ;

TRZECIAKOWSKI, W .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1985, 128 (01) :11-22