THE FORMATION PROCESS AND THE ELECTRICAL NATURE OF THE LOCK-ON FILAMENT IN GE0.09AS0.20TE0.71 GLASS

被引：12

作者：

MARQUEZ, E ^{[1
]}

VILLARES, P ^{[1
]}

JIMENEZGARAY, R ^{[1
]}

机构：

[1] UNIV CADIZ,FAC CIENCIAS,DEPT FIS FUNDAMENTAL,PUERTO REAL,SPAIN

来源：

MATERIALS LETTERS | 1985年 / 3卷 / 12期

关键词：

D O I：

10.1016/0167-577X(85)90100-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：503 / 507

页数：5

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[9] ELECTRICAL AND CALORIMETRICAL ANALYSES OF MEMORY PHENOMENON IN AMORPHOUS SEMICONDUCTORS [J].

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[10] ELECTRICAL NATURE OF LOCK-ON FILAMENT IN AMORPHOUS SEMICONDUCTORS [J].

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