STUDY OF INTERFACE COMPOSITION AND QUALITY IN ALSB/INAS/ALSB QUANTUM-WELLS BY RAMAN-SCATTERING FROM INTERFACE MODES

被引：38

作者：

SELA, I

BOLOGNESI, CR

SAMOSKA, LA

KROEMER, H

机构：

[1] UNIV CALIF SANTA BARBARA,DEPT ELECT & COMP ENGN,SANTA BARBARA,CA 93106

[2] UNIV CALIF SANTA BARBARA,DEPT ENGN MAT,SANTA BARBARA,CA 93106

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 26期

关键词：

D O I：

10.1063/1.106720

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have studied the interface structure and the quality of molecular-beam-epitaxy grown AlSb/InAs/AlSb quantum wells through Raman scattering from interface vibrational modes from single quantum wells. A series of samples was grown by varying the growth temperature and the interface composition (by forcing either a light AlAs or a heavy InSb interface bond configuration at each InAs/AlSb interface). We have observed the InSb modes for all the samples and related the intensity and shape of the interface modes to the structure and quality of the interfaces. This work demonstrates that a single interface heterostructure can be probed by Raman scattering.

引用

页码：3283 / 3285

页数：3

共 14 条

[1]

BARKER AS, 1975, REV MOD PHYS, V47, pS2

[2]

BOLOGNESI CR, UNPUB

[3] CALCULATED SUPERLATTICE AND INTERFACE PHONONS OF INAS/GASB SUPERLATTICES [J].