HOLE CONDUCTION AND VALENCE-BAND STRUCTURE OF SI3N4 FILMS ON SI

被引：81

作者：

WEINBERG, ZA ^{[1
]}

POLLAK, RA ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

APPLIED PHYSICS LETTERS | 1975年 / 27卷 / 04期

关键词：

D O I：

10.1063/1.88413

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：254 / 255

页数：2

共 12 条

[1] SILICON-NITRIDE TRAP PROPERTIES AS REVEALED BY CHARGE-CENTROID MEASUREMENTS ON MNOS DEVICES [J].

ARNETT, PC ;

YUN, BH .

APPLIED PHYSICS LETTERS, 1975, 26 (03) :94-96

[2] PHOTOEMISSION MEASUREMENTS OF VALENCE LEVELS OF AMORPHOUS SIO2 [J].

DISTEFANO, TH ;

EASTMAN, DE .

PHYSICAL REVIEW LETTERS, 1971, 27 (23) :1560-+

[3] 2-BAND CONDUCTION OF AMORPHOUS SILICON-NITRIDE [J].

GINOVKER, AS ;

GRITSENKO, VA ;

SINITSA, SP .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1974, 26 (02) :489-495

[4] HOLE MOBILITY AND TRANSPORT IN THIN SIO2-FILMS [J].

HUGHES, RC .

APPLIED PHYSICS LETTERS, 1975, 26 (08) :436-438

[5] PROPERTIES OF MNOS STRUCTURES [J].

LUNDSTRO.KI ;

SVENSSON, CM .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (06) :826-&

[6]

POWELL RJ, 1975, 1975 EL SOC SPRING M

[7]

ROY P, UNPUBLISHED

[8] CURRENT TRANSPORT AND MAXIMUM DIELECTRIC STRENGTH OF SILICON NITRIDE FILMS [J].

SZE, SM .

JOURNAL OF APPLIED PHYSICS, 1967, 38 (07) :2951-+

[9] DETERMINATION OF SIGN OF CARRIER TRANSPORTED ACROSS SIO2-FILMS ON SI [J].

WEINBERG, ZA ;

JOHNSON, WC ;

LAMPERT, MA .

APPLIED PHYSICS LETTERS, 1974, 25 (01) :42-43

[10] MEASUREMENT OF STEADY-STATE POTENTIAL DIFFERENCE ACROSS A THIN INSULATING FILM IN A CORONA DISCHARGE [J].

WEINBERG, ZA ;

MATTHIES, DL ;

JOHNSON, WC ;

LAMPERT, MA .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1975, 46 (02) :201-203

← 1 2 →