BEAM AMPLIFICATION BY TRANSIENT ENERGY-TRANSFER IN GAAS AND SI

被引：9

作者：

DUBARD, J ^{[1
]}

SMIRL, AL ^{[1
]}

CUI, AG ^{[1
]}

VALLEY, GC ^{[1
]}

BOGGESS, TF ^{[1
]}

机构：

[1] HUGHES RES LABS,MALIBU,CA 90265

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1988年 / 150卷 / 02期

关键词：

Laser Beams - Optical Devices - Semiconducting Silicon;

D O I：

10.1002/pssb.2221500288

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Two beam coupling experiments with 29-ps (FWHM) pulses at a wavelength of 1.06 μm have been performed in GaAs and Si. By optimization of pump-probe energy ratio, time delay and fluence we obtained optical gain up to 25 in GaAs at a fluence of 35 mK/cm2 compared to roughly 140 mJ/cm2 required to obtain similar gain in Si.

引用

收藏

页码：913 / 919

页数：7

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