D- CENTER IN GAAS

[1] SPECTROSCOPIC OBSERVATION OF D-, DO AND CYCLOTRON-RESONANCE LINES IN N-GAAS AND N-INP AT INTERMEDIATE AND STRONG MAGNETIC-FIELDS AND UNDER DIFFERENT CONDITIONS OF BIAS, TEMPERATURE AND PRESSURE [J]. SOLID STATE COMMUNICATIONS, 1985, 53 (12) : 1109 - 1114

[2] BALASUBRAMANIAN S, UNPUB

[3] CHANDRAMOHAN D, UNPUB

[4] ON THE CONTINUOUS ABSORPTION COEFFICIENT OF THE NEGATIVE HYDROGEN ION .2. [J]. ASTROPHYSICAL JOURNAL, 1945, 102 (03) : 395 - 401

[5] EFROS AL, 1985, ELECTRON ELECTRON IN, P483

[6] MOBILE AND IMMOBILE EFFECTIVE-MASS-PARTICLE COMPLEXES IN NONMETALLIC SOLIDS [J]. PHYSICAL REVIEW LETTERS, 1958, 1 (12) : 450 - 453

[7] STRESS DEPENDENCE OF THE BINDING-ENERGY OF D- CENTERS IN SI [J]. PHYSICAL REVIEW B, 1981, 23 (10): : 5521 - 5526

[8] NATORI A, 1978, J PHYS SOC JPN, V44, P1216, DOI 10.1143/JPSJ.44.1216

[9] ELECTRONIC-STRUCTURE OF A D- CENTER IN MANY-VALLEY SEMICONDUCTORS [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1977, 43 (04) : 1270 - 1279

[10] CENTRAL-CELL AND SCREENING EFFECTS ON THE BINDING-ENERGIES OF NEUTRAL CHALCOGEN IMPURITIES IN SILICON [J]. PHYSICAL REVIEW B, 1986, 33 (12): : 8765 - 8767

[1] SPECTROSCOPIC OBSERVATION OF D-, DO AND CYCLOTRON-RESONANCE LINES IN N-GAAS AND N-INP AT INTERMEDIATE AND STRONG MAGNETIC-FIELDS AND UNDER DIFFERENT CONDITIONS OF BIAS, TEMPERATURE AND PRESSURE [J]. SOLID STATE COMMUNICATIONS, 1985, 53 (12) : 1109 - 1114

[2] BALASUBRAMANIAN S, UNPUB

[3] CHANDRAMOHAN D, UNPUB

[4] ON THE CONTINUOUS ABSORPTION COEFFICIENT OF THE NEGATIVE HYDROGEN ION .2. [J]. ASTROPHYSICAL JOURNAL, 1945, 102 (03) : 395 - 401

[5] EFROS AL, 1985, ELECTRON ELECTRON IN, P483

[6] MOBILE AND IMMOBILE EFFECTIVE-MASS-PARTICLE COMPLEXES IN NONMETALLIC SOLIDS [J]. PHYSICAL REVIEW LETTERS, 1958, 1 (12) : 450 - 453

[7] STRESS DEPENDENCE OF THE BINDING-ENERGY OF D- CENTERS IN SI [J]. PHYSICAL REVIEW B, 1981, 23 (10): : 5521 - 5526

[8] NATORI A, 1978, J PHYS SOC JPN, V44, P1216, DOI 10.1143/JPSJ.44.1216

[9] ELECTRONIC-STRUCTURE OF A D- CENTER IN MANY-VALLEY SEMICONDUCTORS [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1977, 43 (04) : 1270 - 1279

[10] CENTRAL-CELL AND SCREENING EFFECTS ON THE BINDING-ENERGIES OF NEUTRAL CHALCOGEN IMPURITIES IN SILICON [J]. PHYSICAL REVIEW B, 1986, 33 (12): : 8765 - 8767