NON-LINEAR REFRACTIVE-INDEX CHANGES IN CDHGTE AT 175 K WITH 10.6-MU-M RADIATION

被引:51
作者
HILL, JR
PARRY, G
MILLER, A
机构
关键词
D O I
10.1016/0030-4018(82)90111-0
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
引用
收藏
页码:151 / 156
页数:6
相关论文
共 16 条
[1]   AUGER-LIMITED CARRIER LIFETIMES IN HGCDTE AT HIGH EXCESS CARRIER CONCENTRATIONS [J].
BARTOLI, F ;
ALLEN, R ;
ESTEROWI.L ;
KRUER, M .
JOURNAL OF APPLIED PHYSICS, 1974, 45 (05) :2150-2154
[2]  
Blakemore J.S., 1962, SEMICONDUCTOR STATIS
[3]   INFRARED OPTICAL-ABSORPTION OF HG1-XCDXTE [J].
FINKMAN, E ;
NEMIROVSKY, Y .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (06) :4356-4361
[4]  
Gaskill J. D., 1978, LINEAR SYSTEMS FOURI
[5]   DEGENERATE 4-WAVE MIXING OF 10.6-MUM RADIATION IN HG1-XCDXTE [J].
JAIN, RK ;
STEEL, DG .
APPLIED PHYSICS LETTERS, 1980, 37 (01) :1-3
[6]  
KHAN MA, 1980, OPT LETT, V5, P261, DOI 10.1364/OL.5.000261
[7]  
KHAN MA, 1981, OPT LETT, V6, P561
[8]  
LONG D, 1970, SEMICONDUCT SEMIMET, V5, P175
[9]   DYNAMIC NON-LINEAR OPTICAL PROCESSES IN SEMICONDUCTORS [J].
MILLER, A ;
MILLER, DAB ;
SMITH, SD .
ADVANCES IN PHYSICS, 1981, 30 (06) :697-800
[10]  
Miller D. A. B., 1981, Optical Bistability. Proceedings of an International Conference, P115