NEW OMNIPRESENT ELECTRON-PARAMAGNETIC RESONANCE SIGNAL IN AS-GROWN SEMIINSULATING LIQUID ENCAPSULATION CZOCHRALSKI GAAS

被引：21

作者：

KAUFMANN, U

BAEUMLER, M

WINDSCHEIF, J

WILKENING, W

机构：

来源：

APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 19期

关键词：

D O I：

10.1063/1.97378

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1254 / 1256

页数：3

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共 20 条

[1] PHOTORESPONSE OF THE ASGA ANTISITE DEFECT IN AS-GROWN GAAS
BAEUMLER, M
KAUFMANN, U
WINDSCHEIF, J
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (08) : 781 - 783
[2] BAEUMLER M, 1985, MATER RES SOC S P, V46, P201
[3] CLERJAUD B, COMMUNICATION
[4] IDENTIFICATION OF ASGA ANTISITE DEFECTS IN LIQUID ENCAPSULATED CZOCHRALSKI GAAS
ELLIOTT, K
CHEN, RT
GREENBAUM, SG
WAGNER, RJ
[J]. APPLIED PHYSICS LETTERS, 1984, 44 (09) : 907 - 909
[5] INFRARED-ABSORPTION AND PHOTOLUMINESCENCE OF DEFECT LEVELS IN THE 204-MEV TO 255-MEV RANGE IN P-TYPE GAAS
FISCHER, DW
YU, PW
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (06) : 1952 - 1955
[6] STOICHIOMETRY-CONTROLLED COMPENSATION IN LIQUID ENCAPSULATED CZOCHRALSKI GAAS
HOLMES, DE
CHEN, RT
ELLIOTT, KR
KIRKPATRICK, CG
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (01) : 46 - 48
[7] ELECTRONIC SPIN OF THE GA VACANCY IN GAP
KENNEDY, TA
WILSEY, ND
KREBS, JJ
STAUSS, GH
[J]. PHYSICAL REVIEW LETTERS, 1983, 50 (17) : 1281 - 1284
[8] LEC GAAS FOR INTEGRATED-CIRCUIT APPLICATIONS
KIRKPATRICK, CG
CHEN, RT
HOLMES, DE
ASBECK, PM
ELLIOTT, KR
FAIRMAN, RD
OLIVER, JR
[J]. SEMICONDUCTORS AND SEMIMETALS, 1984, 20 : 159 - 231
[9] EPR OF CR2+(3D4) IN GALLIUM-ARSENIDE - JAHN-TELLER DISTORTION AND PHOTOINDUCED CHARGE CONVERSION
KREBS, JJ
STAUSS, GH
[J]. PHYSICAL REVIEW B, 1977, 16 (03): : 971 - 973
[10] EFFECTS OF DYNAMICAL JAHN-TELLER INTERACTION ON EPR OF SHALLOW ACCEPTORS IN GAP
MEHRAN, F
TITLE, RS
BLUM, SE
MORGAN, TN
[J]. JOURNAL OF MAGNETIC RESONANCE, 1972, 6 (04) : 620 - &