OBSERVATION OF DOUBLE INJECTION IN LONG SILICON P-I-N STRUCTURES

被引：33

作者：

MAYER, JW

BARON, R

MARSH, OJ

机构：

来源：

PHYSICAL REVIEW | 1965年 / 137卷 / 1A期

关键词：

D O I：

10.1103/PhysRev.137.A286

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：A286 / &

共 33 条

[1] DOUBLE INJECTION IN DEEP-LYING IMPURITY SEMICONDUCTORS
ASHLEY, KL
MILNES, AG
[J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (02) : 369 - &
[2] EFFECTS OF DIFFUSION ON DOUBLE INJECTION IN INSULATORS
BARON, R
[J]. PHYSICAL REVIEW, 1965, 137 (1A): : A272 - &
[3] CURRENT-VOLTAGE CHARACTERISTICS OF LARGE DOUBLE INJECTION IN SI P-I-N STRUCTURES ( SPACE CHARGE RECOMBINATION LI COMPENSATION O-25 DEGREES C E/T )
BARON, R
MARSH, OJ
MAYER, JW
[J]. APPLIED PHYSICS LETTERS, 1964, 4 (04) : 65 - &
[4] BUBE RH, 1960, PHOTOCONDUCTIVITY SO, P60
[5] Davis E.M., 1958, J ELECTRON CONTR, V4, P17
[6] POWER RECTIFIERS AND TRANSISTORS
HALL, RN
[J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11): : 1512 - 1518
[7] USE OF INFRARED ABSORPTION IN GERMANIUM TO DETERMINE CARRIER DISTRIBUTIONS FOR INJECTION AND EXTRACTION
HARRICK, NJ
[J]. PHYSICAL REVIEW, 1956, 103 (05): : 1173 - 1181
[8] DIE ABHANGIGKEIT DER STROMDICHTE EINES P-I-N GLEICHRICHTERS VON DER BREITE SEINER MITTELZONE
HERLET, A
[J]. ZEITSCHRIFT FUR PHYSIK, 1955, 141 (03): : 335 - 345
[9] HERLET A, 1955, Z ANGEW PHYS, V7, P99
[10] HERLET A, 1955, Z ANGEW PHYS, V7, P149