EFFECT OF NITRIDATION RATE ON THE COMPOSITION AND CONDUCTIVITY OF TITANIUM NITRIDE FILMS PREPARED FROM SOL-GEL TITANIA

被引:14
作者
KEDDIE, JL
LI, J
MAYER, JW
GIANNELIS, EP
机构
[1] Department of Materials Science and Engineering, Cornell University, Ithaca, New York
关键词
D O I
10.1111/j.1151-2916.1991.tb06869.x
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Nitridation of TiO2 films in NH3 was studied as a function of heating rate by N-14(alpha, alpha)N-14 and O-16(alpha, alpha)O-16 nuclear resonance, Auger depth profiling, X-ray diffraction, and electrical conductivity measurements. TiN films containing minimal amount of oxygen and exhibiting the lowest resistivity were obtained when the fastest nitridation rate (70-degrees-C/min) was used. Nitridation at slower rates not only increased the film-oxygen content and electrical resistivity but also produced an oxygen concentration gradient across the film.
引用
收藏
页码:2937 / 2940
页数:4
相关论文
共 22 条
[21]   NITROGEN, OXYGEN, AND ARGON INCORPORATION DURING REACTIVE SPUTTER DEPOSITION OF TITANIUM NITRIDE [J].
WILLIAMS, DS ;
BAIOCCHI, FA ;
BEAIRSTO, RC ;
BROWN, JM ;
KNOELL, RV ;
MURARKA, SP .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (06) :1723-1729
[22]  
WITTMER M, 1982, THIN FILMS INTERFACE, P409