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LINEWIDTH BROADENING FACTOR OF A MICROCAVITY SEMICONDUCTOR-LASER

被引：23
作者：
JIN, R
BOGGAVARAPU, D
KHITROVA, G
GIBBS, HM
HU, YZ
KOCH, SW
PEYGHAMBARIAN, N
机构：
[1] Optical Sciences Center, University of Arizona, Tucson
来源：
APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 16期
关键词：
D O I：
10.1063/1.108377
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The emission linewidth above threshold is measured in a GaAs/AlGaAs microcavity surface-emitting laser with a single cavity mode. The measured linewidth broadening factor is in good agreement with theoretical calculations that include the most important many-body Coulomb effects of the electron-hole plasma.
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页码：1883 / 1885
页数：3
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